Renesas NP60N04ILF-E1-AZ

NP60N04ILF-E1-AZ Renesas
Renesas

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
1.2W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (MP-3Z)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is NP60N04ILF-E1-AZ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 6.5mohm @ 30a, 10v. The maximum gate charge and given voltages include 75 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1.2w (ta), 100w (tc). The product's input capacitance at maximum includes 3900 pf @ 25 v. The product is available in surface mount configuration. to-252 (mp-3z) is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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