onsemi 2SJ635-TL-E

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
150°C
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
60mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs(th) (Max) @ Id:
2.6V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
1W (Ta), 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TP
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SJ635-TL-E. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 60mohm @ 6a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1w (ta), 30w (tc). The product's input capacitance at maximum includes 2200 pf @ 20 v. The product is available in through hole configuration. tp is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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