Renesas 2SJ532-E

Renesas

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
55mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 10 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220CFM
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is 2SJ532-E. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 55mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 2v @ 1ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1750 pf @ 10 v. The product is available in through hole configuration. to-220cfm is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). The product carries maximum power dissipation 30w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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