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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN6R0-25YLD115. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 6.75mohm @ 15a, 10v. The maximum gate charge and given voltages include 10.5 nc @ 10 v. The product is not applicable. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 43w (ta). The product's input capacitance at maximum includes 705 pf @ 12 v. The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 61a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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