NXP USA Inc. PMXB65UPE147

PMXB65UPE147 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
72mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 4.5 V
RoHS Status:
Not applicable
REACH Status:
Vendor Undefined
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
317mW (Ta), 8.33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
634 pF @ 6 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010D-3
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMXB65UPE147. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. It has a maximum Rds On and voltage of 72mohm @ 3.2a, 4.5v. The maximum gate charge and given voltages include 12 nc @ 4.5 v. The product is not applicable. In addition, it is vendor undefined. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. It is shipped in bulk package . The product has a 12 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 317mw (ta), 8.33w (tc). The product's input capacitance at maximum includes 634 pf @ 6 v. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The continuous current drain at 25°C is 3.2a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PMXB65UPE(Datasheets)

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