NXP USA Inc. BUK754R0-55B,127

BUK754R0-55B-127 NXP USA Inc. BUK754R0-55B,127
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6776 pF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchMOS™
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BUK754R0-55B,127. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 4mohm @ 25a, 10v. The maximum gate charge and given voltages include 86 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 6776 pf @ 25 v. The product is available in through hole configuration. The product trenchmos™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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