Renesas Electronics America Inc UPA2520T1H-T1-AT

UPA2520T1H-T1-AT Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
10.8 nC @ 5 V
RoHS Status:
Not applicable
Rds On (Max) @ Id, Vgs:
13.2mOhm @ 10A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-VSOF
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Renesas Electronics America Inc. The manufacturer part number is UPA2520T1H-T1-AT. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. The maximum gate charge and given voltages include 10.8 nc @ 5 v. The product is not applicable. It has a maximum Rds On and voltage of 13.2mohm @ 10a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 30 v drain to source voltage. The product's input capacitance at maximum includes 1100 pf @ 15 v. The product is available in surface mount configuration. 8-vsof is the supplier device package value. The continuous current drain at 25°C is 10a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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