NXP USA Inc. PMFPB8040XP,115

PMFPB8040XP-115 NXP USA Inc. PMFPB8040XP,115
NXP USA Inc.

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
8.6 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
102mOhm @ 2.7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
485mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMFPB8040XP,115. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. The maximum gate charge and given voltages include 8.6 nc @ 4.5 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 102mohm @ 2.7a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 485mw (ta), 6.25w (tc). The product's input capacitance at maximum includes 550 pf @ 10 v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The continuous current drain at 25°C is 2.7a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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