NEC Corporation NP82N055MUG-S18-AY

NP82N055MUG-S18-AY NEC Corporation
NEC Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
RoHS Status:
Not applicable
Rds On (Max) @ Id, Vgs:
6mOhm @ 41A, 10V
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Power Dissipation (Max):
1.8W (Ta), 143W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9600 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
82A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by NEC Corporation. The manufacturer part number is NP82N055MUG-S18-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 160 nc @ 10 v. The product is not applicable. It has a maximum Rds On and voltage of 6mohm @ 41a, 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 55 v drain to source voltage. The product carries maximum power dissipation 1.8w (ta), 143w (tc). The product's input capacitance at maximum includes 9600 pf @ 25 v. The product is available in through hole configuration. to-220 is the supplier device package value. The continuous current drain at 25°C is 82a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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