Renesas Electronics America Inc NP80N055PDG-E1B-AY

NP80N055PDG-E1B-AY Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 40A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Power Dissipation (Max):
1.8W (Ta), 115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is NP80N055PDG-E1B-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 135 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 6.6mohm @ 40a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 55 v drain to source voltage. The product carries maximum power dissipation 1.8w (ta), 115w (tc). The product's input capacitance at maximum includes 6900 pf @ 25 v. The product is available in surface mount configuration. to-263 is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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