Fairchild Semiconductor IRLI610ATU

IRLI610ATU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 5 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.65A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Power Dissipation (Max):
3.1W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
240 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-262 (I2PAK)
Current - Continuous Drain (Id) @ 25°C:
3.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRLI610ATU. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. The maximum gate charge and given voltages include 9 nc @ 5 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 1.5ohm @ 1.65a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3.1w (ta), 33w (tc). The product's input capacitance at maximum includes 240 pf @ 25 v. The product is available in through hole configuration. to-262 (i2pak) is the supplier device package value. The continuous current drain at 25°C is 3.3a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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