International Rectifier IRF7478PBF

IRF7478PBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
26mOhm @ 4.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1740 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
8-SO
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRF7478PBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 31 nc @ 4.5 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 26mohm @ 4.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1740 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The continuous current drain at 25°C is 7a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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