Fairchild Semiconductor FQI7N10LTU

FQI7N10LTU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
350mOhm @ 3.65A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
3.75W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
290 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-262 (I2PAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQI7N10LTU. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 350mohm @ 3.65a, 10v. The maximum gate charge and given voltages include 6 nc @ 5 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3.75w (ta), 40w (tc). The product's input capacitance at maximum includes 290 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-262 (i2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7.3a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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