N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH200N10WF7-2

STH200N10WF7-2 N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics
STH200N10WF7-2
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
STH200
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Package Type:
H2PAK-2
Maximum Continuous Drain Current:
180 A
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
4mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs:
93 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
340W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4430 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
H2PAK-2
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 180 A 100 V 3-Pin H2PAK-2 manufactured by STMicroelectronics. The manufacturer part number is STH200N10WF7-2. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sth200, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of h2pak-2. While 180 a of maximum continuous drain current. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 4mohm @ 90a, 10v. The maximum gate charge and given voltages include 93 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 340w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 4430 pf @ 25 v. h2pak-2 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 180a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - STH200N10WF7-2(Technical Reference)
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STH200N10WF7-2(Datasheets)
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Carrier tape design improvement 05/Mar/2024(PCN Packaging)

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