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This is Silicon carbide Power MOSFET 650 V 55 m manufactured by STMicroelectronics. The manufacturer part number is SCTWA35N65G2V-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 ω maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 240w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 1370 pf @ 400 v. to-247-4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 45a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa35, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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