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This is Silicon carbide Power MOSFET 1200 V 35 manufactured by STMicroelectronics. The manufacturer part number is SCTH60N120G2-7. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.052 ω maximum drain source resistance. The package is a sort of h2pak-7. It consists of 1 elements per chip. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 52mohm @ 30a, 10v. The maximum gate charge and given voltages include 94 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product carries maximum power dissipation 390w (tc). The product's input capacitance at maximum includes 1969 pf @ 800 v. It has a long 52 weeks standard lead time. h2pak-7 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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