NXP Semiconductors PSMN5R0-100PS,127

PSMN5R0-100PS-127 NXP Semiconductors PSMN5R0-100PS,127
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
5mOhm @ 25A, 10V
title:
PSMN5R0-100PS,127
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9900 pF @ 50 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Supplier Device Package:
TO-220AB
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN5R0-100PS,127. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 5mohm @ 25a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 338w (tc). The product's input capacitance at maximum includes 9900 pf @ 50 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 170 nc @ 10 v. to-220ab is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PSMN5R0-100PS,127 Datasheet(Datasheets)

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