NXP Semiconductors PMV100XPEA215

PMV100XPEA215 NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
128mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 4.5 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
463mW (Ta), 4.45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
386 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMV100XPEA215. The typical Vgs (th) (max) of the product is 1.25v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 128mohm @ 2.4a, 4.5v. The maximum gate charge and given voltages include 6 nc @ 4.5 v. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 463mw (ta), 4.45w (tc). The product's input capacitance at maximum includes 386 pf @ 10 v. The product is available in surface mount configuration. sot-23 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 2.4a (ta). This product use mosfet (metal oxide) technology.

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PMV100XPEA,215(Datasheets)

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