Maximum Drain Source Voltage:
150 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTB01
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.0109 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
75.4 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 223µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
10.9mOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.75W (Ta), 136.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2810 pF @ 75 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
12.5A (Ta), 75.4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
