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This is manufactured by Infineon Technologies. The manufacturer part number is SI4435DYPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 20mohm @ 8a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta). The product's input capacitance at maximum includes 2320 pf @ 15 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. 8-so is the supplier device package value. The continuous current drain at 25°C is 8a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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