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Toshiba Semiconductor and Storage TK7R0E08QM,S1X

TK7R0E08QM-S1X Toshiba Semiconductor and Storage TK7R0E08QM,S1X
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
7mOhm @ 32A, 10V
title:
TK7R0E08QM,S1X
Vgs(th) (Max) @ Id:
3.5V @ 500µA
edacadModel:
TK7R0E08QM,S1X Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/14680943
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
87W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 40 V
Mounting Type:
Through Hole
Series:
U-MOSX-H
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK7R0E08QM,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 7mohm @ 32a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 500µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 87w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 2700 pf @ 40 v. The product is available in through hole configuration. The product u-mosx-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 39 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 64a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search TK7R0E08QM,S1X on website for other similar products.
We accept all major payment methods for all products including ET21836072. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK7R0E08QM,S1X directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK7R0E08QM,S1X. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK7R0E08QM,S1X.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21836072 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21836072.
Yes. We ship TK7R0E08QM,S1X Internationally to many countries around the world.
Related Manufacturers: Texas Instruments ROHM Semiconductor Microchip Technology IXYS Taiwan Semiconductor Corporation Toshiba Semiconductor and Storage onsemi Yangjie Technology International Rectifier Harris Corporation
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