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This is N-Channel MOSFET 19 A 650 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is NTP165N65S3H. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product ntp165n65s, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.165 ω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1.6ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 165mohm @ 9.5a, 10v. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 142w (tc). The product's input capacitance at maximum includes 1808 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 19a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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