Deliver to
United Kingdom
Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!
This is N-Channel MOSFET 20 A 650 V 4-Pin PQFN manufactured by onsemi. The manufacturer part number is NTMT190N65S3HF. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntmt190n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of pqfn4 8 x 8. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 430µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 162w (tc). The product's input capacitance at maximum includes 1610 pf @ 400 v. The product superfet® iii, frfet®, is a highly preferred choice for users. 4-pqfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
Basket Total:
£ 0
