N-Channel MOSFET, 150 A, 25 V, 8-Pin PQFN8 ON Semiconductor NTTFS1D8N02P1E

NTTFS1D8N02P1E N-Channel MOSFET, 150 A, 25 V, 8-Pin PQFN8 ON Semiconductor
NTTFS1D8N02P1E
onsemi

Product Information

Maximum Drain Source Voltage:
25 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
Power
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
1.3 mΩ
Package Type:
PQFN8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
150 A
Transistor Material:
Si
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 700µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
800mW (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3159 pF @ 13 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 152A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS1
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 150 A 25 V 8-Pin PQFN8 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTTFS1D8N02P1E. It has a maximum of 25 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 1.3 mω maximum drain source resistance. The package is a sort of pqfn8. It consists of 1 elements per chip. While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 700µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 1.3mohm @ 30a, 10v. The maximum gate charge and given voltages include 38 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is +16v, -12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 800mw (ta), 48w (tc). The product's input capacitance at maximum includes 3159 pf @ 13 v. It has a long 6 weeks standard lead time. 8-pqfn (3.3x3.3) is the supplier device package value. The continuous current drain at 25°C is 20a (ta), 152a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nttfs1, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - NTTFS1D8N02P1E(Technical Reference)
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NTTFS1D8N02P1E(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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