onsemi NTMFS015N10MCLT1G

NTMFS015N10MCLT1G onsemi
NTMFS015N10MCLT1G
onsemi

Product Information

Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
54 A
Mounting Type:
Surface Mount
Transistor Material:
Si
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
12.2 mΩ
Package Type:
DFN5
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
5
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 282µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
12.2mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 79W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
13380 pF @ 50 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta), 54A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS015
ECCN:
EAR99
RoHs Compliant
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This is manufactured by onsemi. The manufacturer part number is NTMFS015N10MCLT1G. It has a maximum of 100 v drain source voltage. While 54 a of maximum continuous drain current. The product is available in surface mount configuration. The transistor is manufactured from highly durable si material. The product carries 3v of maximum gate threshold voltage. It provides up to 12.2 mω maximum drain source resistance. The package is a sort of dfn5. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 5 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 282µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 12.2mohm @ 14a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta), 79w (tc). The product's input capacitance at maximum includes 13380 pf @ 50 v. It has a long 26 weeks standard lead time. 5-dfn (5x6) (8-sofl) is the supplier device package value. The continuous current drain at 25°C is 10.5a (ta), 54a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmfs015, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - NTMFS015N10MCLT1G(Technical Reference)
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Wafer Fab Change 14/Nov/2023(PCN Assembly/Origin)
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NTMFS015N10MCL(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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