Maximum Continuous Drain Current:
123 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
136 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 190µA
REACH Status:
REACH Unaffected
edacadModel:
NVMFS6H818NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/8636602
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 40 V
Qualification:
AEC-Q101
standardLeadTime:
36 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 123A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS6
ECCN:
EAR99
