Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
225 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
117mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDS2734 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/1217882
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2610 pF @ 100 V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS27
ECCN:
EAR99
This is N-Channel MOSFET 3 A 250 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS2734. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 225 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 117mohm @ 3a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta). The product's input capacitance at maximum includes 2610 pf @ 100 v. It has a long 18 weeks standard lead time. The product ultrafet™, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds27, a base product number of the product. The product is designated with the ear99 code number.
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