Toshiba Semiconductor and Storage TPCC8104,L1Q

Enrgtech Part No: ET20577498
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Manufacturer Part No:
TPCC8104,L1Q
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.29.0095

Vgs(th) (Max) @ Id:

2V @ 500µA

Operating Temperature:

150°C

Package / Case:

8-PowerVDFN

Rds On (Max) @ Id, Vgs:

8.8mOhm @ 10A, 10V

title:

TPCC8104,L1Q

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Drain to Source Voltage (Vdss):

30 V

Vgs (Max):

+20V, -25V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8104,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 500µa. The product has 150°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 8.8mohm @ 10a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -25v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2260 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. The maximum gate charge and given voltages include 58 nc @ 10 v. 8-tson advance (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). The product carries maximum power dissipation 700mw (ta), 27w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpcc8104, a base product number of the product. The product is designated with the ear99 code number.

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