Vishay Siliconix SI3407DV-T1-BE3

SI3407DV-T1-BE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
24mOhm @ 7.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 10 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta), 8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3407
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3407DV-T1-BE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 24mohm @ 7.5a, 4.5v. The maximum gate charge and given voltages include 63 nc @ 10 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta), 4.2w (tc). The product's input capacitance at maximum includes 1670 pf @ 10 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. The continuous current drain at 25°C is 7.5a (ta), 8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si3407, a base product number of the product. The product is designated with the ear99 code number.

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Mult Devs Manufacturing Capacity Expansion 13/Mar/2023(PCN Assembly/Origin)
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SI3407DV-T1-BE3(Datasheets)

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FAQs

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