Toshiba Semiconductor and Storage TKR74F04PB,LXGQ

TKR74F04PB-LXGQ Toshiba Semiconductor and Storage TKR74F04PB,LXGQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
0.74mOhm @ 125A, 10V
edacadModel:
TKR74F04PB,LXGQ Models
Gate Charge (Qg) (Max) @ Vgs:
227 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12821402
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
14200 pF @ 10 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
TO-220SM(W)
Current - Continuous Drain (Id) @ 25°C:
250A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TKR74F04
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TKR74F04PB,LXGQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 0.74mohm @ 125a, 10v. The maximum gate charge and given voltages include 227 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 375w (tc). The product's input capacitance at maximum includes 14200 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. to-220sm(w) is the supplier device package value. The continuous current drain at 25°C is 250a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tkr74f04, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TKR74F04PB,LXGQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TKR74F04PB,LXGQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20188587 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20188587.
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