Vishay Siliconix SISS80DN-T1-GE3

SISS80DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs:
0.92mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 10 V
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
+12V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6450 pF @ 10 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C:
58.3A (Ta), 210A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS80
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISS80DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. It has a maximum Rds On and voltage of 0.92mohm @ 10a, 10v. The maximum gate charge and given voltages include 122 nc @ 10 v. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is +12v, -8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 65w (tc). The product's input capacitance at maximum includes 6450 pf @ 10 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8s is the supplier device package value. The continuous current drain at 25°C is 58.3a (ta), 210a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siss80, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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N-Channel 20 V (D-S) MOSFET(Datasheets)

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FAQs

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You will get a confirmation email regarding your order of Vishay Siliconix SISS80DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS80DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20162162 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20162162.
Yes. We ship SISS80DN-T1-GE3 Internationally to many countries around the world.