Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ

TK33S10N1Z-LXHQ Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 16.5A, 10V
edacadModel:
TK33S10N1Z,LXHQ Models
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/12352711
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2050 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
DPAK+
Current - Continuous Drain (Id) @ 25°C:
33A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK33S10
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK33S10N1Z,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 9.7mohm @ 16.5a, 10v. The maximum gate charge and given voltages include 28 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 2050 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 33a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk33s10, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search TK33S10N1Z,LXHQ on website for other similar products.
We accept all major payment methods for all products including ET20114041. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK33S10N1Z,LXHQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20114041 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20114041.
Yes. We ship TK33S10N1Z,LXHQ Internationally to many countries around the world.