Microchip Technology APT1001RBVRG

APT1001RBVRG Microchip Technology
Microchip Technology

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
1Ohm @ 500mA, 10V
title:
APT1001RBVRG
Vgs(th) (Max) @ Id:
4V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
1000 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3660 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS V®
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Supplier Device Package:
TO-247 [B]
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT1001
ECCN:
EAR99
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This is manufactured by Microchip Technology. The manufacturer part number is APT1001RBVRG. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 1ohm @ 500ma, 10v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The product has a 1000 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 26 weeks standard lead time. The product's input capacitance at maximum includes 3660 pf @ 25 v. The product is available in through hole configuration. The product power mos v®, is a highly preferred choice for users. The maximum gate charge and given voltages include 225 nc @ 10 v. to-247 [b] is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to apt1001, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Assembly Site 23/May/2024(PCN Assembly/Origin)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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