Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ

XPN6R706NC-L1XHQ Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ
XPN6R706NC,L1XHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 300µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 20A, 10V
title:
XPN6R706NC,L1XHQ
edacadModel:
XPN6R706NC,L1XHQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/12154997
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
840mW (Ta), 100W (Tc)
standardLeadTime:
52 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Supplier Device Package:
8-TSON Advance-WF (3.1x3.1)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPN6R706
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XPN6R706NC,L1XHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 300µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 6.7mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 840mw (ta), 100w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 2000 pf @ 10 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 35 nc @ 10 v. 8-tson advance-wf (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to xpn6r706, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Term of Use Statement(Other Related Documents)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search XPN6R706NC,L1XHQ on website for other similar products.
We accept all major payment methods for all products including ET19870721. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with XPN6R706NC,L1XHQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19870721 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19870721.
Yes. We ship XPN6R706NC,L1XHQ Internationally to many countries around the world.