STMicroelectronics STW35N60M2-EP

STMicroelectronics

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
-
title:
STW35N60M2-EP
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Through Hole
Series:
MDmesh™ M2-EP
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW35N
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is STW35N60M2-EP. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. In addition, it is reach unaffected. It carries FET type n-channel. The product has a 600 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. The product mdmesh™ m2-ep, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 26a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw35n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev OBS 3/Jul/2020(PCN Obsolescence/ EOL)

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