Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Series:
SCT
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.02 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
98 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
26mOhm @ 50A, 18V
title:
SCTH100N65G2-7AG
Vgs(th) (Max) @ Id:
5V @ 5mA
REACH Status:
REACH Unaffected
edacadModel:
SCTH100N65G2-7AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/11591006
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3315 pF @ 520 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
162 nC @ 18 V
Supplier Device Package:
H2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
95A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH100
ECCN:
EAR99
