STMicroelectronics SCTW40N120G2VAG

SCTW40N120G2VAG STMicroelectronics
SCTW40N120G2VAG
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Depletion
Series:
SCT
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.105 Ω
Package Type:
HiP247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
105mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 18 V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
290W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1230 pF @ 800 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW40
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is SCTW40N120G2VAG. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.105 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 105mohm @ 20a, 18v. The maximum gate charge and given voltages include 63 nc @ 18 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 290w (tc). The product's input capacitance at maximum includes 1230 pf @ 800 v. It has a long 52 weeks standard lead time. The product is automotive, a grade of class. hip247™ is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctw40, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - SCTW40N120G2VAG(Technical Reference)
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SCTW40N120G2VAG(Datasheets)
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TO247 Frame 24-Feb-2022(PCN Design/Specification)
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Standard outer labelling 15/Nov/2023(PCN Packaging)

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