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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN19008QM,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 200µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 19mohm @ 17a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 630mw (ta), 57w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 1400 pf @ 40 v. The product is available in surface mount configuration. The product u-mosx-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 16 nc @ 10 v. 8-tson advance (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 34a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn19008, a base product number of the product. The product is designated with the ear99 code number.
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