Toshiba Semiconductor and Storage TPH4R803PL,LQ

TPH4R803PL-LQ Toshiba Semiconductor and Storage TPH4R803PL,LQ
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 30V 48A (Tc) 830mW (Ta), 69W (Tc) Surface Mount 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
2.1V @ 200µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Base Part Number:
TPH4R803
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 24A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1975pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-SOP Advance (5x5)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Customer Reference:
Power Dissipation (Max):
830mW (Ta), 69W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH4R803PL,LQ. It has typical 32 weeks of manufacturer standard lead time. It features n-channel 30v 48a (tc) 830mw (ta), 69w (tc) surface mount 8-sop advance (5x5). The typical Vgs (th) (max) of the product is 2.1v @ 200µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tph4r803. The maximum gate charge and given voltages include 22nc @ 10v. It has a maximum Rds On and voltage of 4.8mohm @ 24a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1975pf @ 15v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 48a (tc). The product carries maximum power dissipation 830mw (ta), 69w (tc). This product use mosfet (metal oxide) technology.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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