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United Kingdom
This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN2R8-40YSDX. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 2.8mohm @ 25a, 10v. The maximum gate charge and given voltages include 62 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.6v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 147w (tc). It has a long 13 weeks standard lead time. The product's input capacitance at maximum includes 4507 pf @ 20 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 160a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn2r8, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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