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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK49N65W,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 2.5ma. The product has 150°c operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 55mohm @ 24.6a, 10v. The maximum gate charge and given voltages include 160 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400w (tc). The product's input capacitance at maximum includes 6500 pf @ 300 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. to-247 is the supplier device package value. The continuous current drain at 25°C is 49.2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk49n65, a base product number of the product. The product is designated with the ear99 code number.
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