Maximum Continuous Drain Current:
15 A
Width:
9.35mm
Transistor Configuration:
Single
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
230 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.25V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
130 W
Maximum Gate Source Voltage:
±25 V
Height:
4.37mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
230mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STB22N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9997321
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ M6
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB22
ECCN:
EAR99
