Typical Gate Charge @ Vgs:
16.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4.75V
Height:
4.37mm
Width:
9.35mm
Length:
10.4mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
13 A
Minimum Gate Threshold Voltage:
3.25V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB18N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9997319
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M6
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18
ECCN:
EAR99
