Toshiba Semiconductor and Storage SSM6J401TU,LF

SSM6J401TU-LF Toshiba Semiconductor and Storage SSM6J401TU,LF
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
SSM3K15
Detailed Description:
P-Channel 30V 2.5A (Ta) 500mW (Ta) Surface Mount UF6
Input Capacitance (Ciss) (Max) @ Vds:
730pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Rds On (Max) @ Id, Vgs:
73mOhm @ 2A, 10V
Supplier Device Package:
UF6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
500mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J401TU,LF. Base Part Number: ssm3k15. It features p-channel 30v 2.5a (ta) 500mw (ta) surface mount uf6. The product's input capacitance at maximum includes 730pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 16nc @ 10v. It has a maximum Rds On and voltage of 73mohm @ 2a, 10v. uf6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 500mw (ta). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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