Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
13 A
Mounting Type:
Surface Mount
Series:
M6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
0.23 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
title:
STD18N60M6
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ M6
Gate Charge (Qg) (Max) @ Vgs:
16.8 nC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD18
ECCN:
EAR99
