Infineon Technologies IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1 Infineon Technologies
IAUS200N08S5N023ATMA1
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSMD, Gull Wing
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs(th) (Max) @ Id:
3.8V @ 130µA
REACH Status:
REACH Unaffected
edacadModel:
IAUS200N08S5N023ATMA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/9816175
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7670 pF @ 40 V
Qualification:
AEC-Q101
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
OptiMOS™
Supplier Device Package:
PG-HSOG-8-1
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IAUS200
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IAUS200N08S5N023ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powersmd, gull wing. It has a maximum Rds On and voltage of 2.3mohm @ 100a, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.8v @ 130µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 7670 pf @ 40 v. It has a long 18 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. The product optimos™, is a highly preferred choice for users. pg-hsog-8-1 is the supplier device package value. The continuous current drain at 25°C is 200a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to iaus200, a base product number of the product. The product is designated with the ear99 code number.

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IAUS200N08S5N023(Datasheets)

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FAQs

Yes. You can also search IAUS200N08S5N023ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET18042064. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IAUS200N08S5N023ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IAUS200N08S5N023ATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IAUS200N08S5N023ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18042064 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18042064.
Yes. We ship IAUS200N08S5N023ATMA1 Internationally to many countries around the world.