Vishay Siliconix SISH410DN-T1-GE3

SISH410DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8SH
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 20A, 10V
edacadModel:
SISH410DN-T1-GE3 Models
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9599013
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 10 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 35A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISH410
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISH410DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. It has a maximum Rds On and voltage of 4.8mohm @ 20a, 10v. The maximum gate charge and given voltages include 41 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 52w (tc). The product's input capacitance at maximum includes 1600 pf @ 10 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. The continuous current drain at 25°C is 22a (ta), 35a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sish410, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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SISH410DN(Datasheets)

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FAQs

Yes. You can also search SISH410DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET17518337. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISH410DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISH410DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISH410DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17518337 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17518337.
Yes. We ship SISH410DN-T1-GE3 Internationally to many countries around the world.