Vishay Siliconix SISH112DN-T1-GE3

SISH112DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8SH
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 17.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Tc)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2610 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8SH
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
11.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISH112
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISH112DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. It has a maximum Rds On and voltage of 7.5mohm @ 17.8a, 10v. The maximum gate charge and given voltages include 27 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.5w (tc). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 2610 pf @ 15 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11.3a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sish112, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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SISH112DN(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET17518335. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISH112DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISH112DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISH112DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17518335 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17518335.
Yes. We ship SISH112DN-T1-GE3 Internationally to many countries around the world.