Taiwan Semiconductor Corporation TSM60NB1R4CH C5G

TSM60NB1R4CH-C5G Taiwan Semiconductor Corporation TSM60NB1R4CH C5G
Taiwan Semiconductor Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 900mA, 10V
title:
TSM60NB1R4CH C5G
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
TSM60NB1R4CH C5G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/7360469
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
257.3 pF @ 100 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
7.12 nC @ 10 V
Supplier Device Package:
TO-251 (IPAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Power Dissipation (Max):
28.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM60
ECCN:
EAR99
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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM60NB1R4CH C5G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 1.4ohm @ 900ma, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 257.3 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 7.12 nc @ 10 v. to-251 (ipak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3a (tc). The product carries maximum power dissipation 28.4w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm60, a base product number of the product. The product is designated with the ear99 code number.

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OBS 22/Jan/2024(PCN Obsolescence/ EOL)
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Taiwan Semi RoHS(Environmental Information)
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Taiwan Semi REACH(Environmental Information)

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