Taiwan Semiconductor Corporation TSM4NB60CZ C0G

Enrgtech Part No: ET16678356
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Manufacturer Part No:
TSM4NB60CZ C0G
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Manufacturer: Taiwan Semiconductor Corporation

TSM4NB60CZ-C0G Taiwan Semiconductor Corporation TSM4NB60CZ C0G

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

TO-220-3

Rds On (Max) @ Id, Vgs:

2.5Ohm @ 2A, 10V

title:

TSM4NB60CZ C0G

Vgs(th) (Max) @ Id:

4.5V @ 250µA

REACH Status:

REACH Unaffected

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

10V

Drain to Source Voltage (Vdss):

600 V

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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM4NB60CZ C0G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 2.5ohm @ 2a, 10v. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 50w (tc). The product's input capacitance at maximum includes 500 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 14.5 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

TSM4NB60(Datasheets)

Taiwan Semi RoHS(Environmental Information)

Taiwan Semi REACH(Environmental Information)

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